Kolkovsky, Vl: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2

Kolkovsky, Vl., Lukat, K.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 549 KB

english, 2013

2

Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy

Gelczuk, Å., DÄbrowska-Szata, M., Kolkovsky, Vl., Sochacki, M., Szmidt, J., Gotszalk, T.

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 848 KB

english, 2020

3

No trace of divacancies at room temperature in germanium

Vl. Kolkovsky, M. Christian Petersen, A. Nylandsted Larsen, A. Mesli

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 164 KB

english, 2008

4

Electrically active defects induced by hydrogen and helium implantations in Ge

V.P. Markevich, S. Bernardini, I.D. Hawkins, A.R. Peaker, Vl. Kolkovsky, A. Nylandsted Larsen, L. Dobaczewski

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 451 KB

english, 2008

5

Defects and impurities in SiGe: The effect of alloying

A. Mesli, Vl. Kolkovsky, L. Dobaczewski, A. Nylandsted Larsen, N.V. Abrosimov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

6

Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

Vl. Kolkovsky, L. Dobaczewski, K. Bonde Nielsen, V. Kolkovsky, A. Nylandsted Larsen, J. Weber

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 218 KB

english, 2009

7

Electrical characterization of as-grown and H plasma treated CdTe epitaxial layers

Vl. Kolkovsky, V. Kolkovsky, J. Weber

Journal:

Energy Procedia

Year:

2011

Language:

english

File:

PDF, 296 KB

english, 2011

8

Point defects in SiGe alloys: structural guessing based on electronic transition analysis

A. Mesli, P. Kruszewski, L. Dobaczewski, Vl. Kolkovsky, A. Nylandsted Larsen, N. V. Abrosimov

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 605 KB

english, 2008

9

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

F.D. Auret, P.J. Janse van Rensburg, W.E. Meyer, S.M.M. Coelho, Vl. Kolkovsky, J.R. Botha, C. Nyamhere, A. Venter

Journal:

Physica B: Condensed Matter

Year:

2012

Language:

english

File:

PDF, 224 KB

english, 2012

10

Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques

Scheffler, L, Kolkovsky, Vl, Lavrov, E V, Weber, J

Journal:

Journal of Physics Condensed Matter

Year:

2011

Language:

english

File:

PDF, 778 KB

english, 2011

11

Detrimental effects of atomic hydrogen on the formation of Schottky barriers in p-type Ge

Kolkovsky, Vl, Klemm, S, Allardt, M, Weber, J

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 337 KB

english, 2013

12

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

Kolkovsky, Vl., Zytkiewicz, Z. R., Sobanska, M., Klosek, K.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 834 KB

english, 2013

13

property of interstitial hydrogen in GaAs

Kolkovsky, Vl., Nielsen, K. Bonde, Larsen, A. Nylandsted, Dobaczewski, L.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 154 KB

english, 2008

14

Vertical charge-carrier transport in Si nanocrystal/SiO 2 multilayer structures

Osinniy, V, Lysgaard, S, Kolkovsky, Vl, Pankratov, V, Nylandsted Larsen, A

Journal:

Year:

2009

Language:

english

File:

PDF, 1.24 MB

english, 2009

15

Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study

Kolkovsky, Vl., Scheffler, L., Weber, J.

Journal:

Physica B: Condensed Matter

Year:

2014

Language:

english

File:

PDF, 616 KB

english, 2014

16

-type germanium

Kolkovsky, Vl., Petersen, M. Christian, Mesli, A., Larsen, A. Nylandsted

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 133 KB

english, 2010

17

Alpha-particle irradiation-induced defects in n-type germanium

Kolkovsky, Vl., Petersen, M. Christian, Larsen, A. Nylandsted

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 314 KB

english, 2007

18

Schottky contacts on differently grown n-type ZnO single crystals

Kolkovsky, Vl., Scheffler, L., Hieckmann, E., Lavrov, E. V., Weber, J.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 393 KB

english, 2011

19

Electrical levels in nickel doped silicon

Scheffler, L., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.43 MB

english, 2014

20

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique

Stübner, R., Kolkovsky, Vl., Leibiger, Gunnar, Habel, Frank, Weber, J.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 818 KB

english, 2014

21

in ZnO

Herklotz, F., Lavrov, E. V., Kolkovsky, Vl., Weber, J., Stavola, M.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 561 KB

english, 2010

22

Donor level of interstitial hydrogen in CdTe

Kolkovsky, Vl., Kolkovsky, V., Nielsen, K. Bonde, Dobaczewski, L., Karczewski, G., Larsen, A. Nylandsted

Journal:

Physical Review B

Year:

2009

Language:

english

File:

PDF, 121 KB

english, 2009

23

complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique

Kolkovsky, Vl., Andersen, O., Dobaczewski, L., Peaker, A. R., Nielsen, K. Bonde

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 129 KB

english, 2006

24

Isolated substitutional cobalt and Co-related complexes in silicon

Scheffler, L., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 752 KB

english, 2013

25

Stable and metastable configurations of iron atoms in SiGe alloys

Kolkovsky, Vl, Mesli, A, Dobaczewski, L, Abrosimov, N V, Zytkiewicz, Z R, Peaker, A R

Journal:

Journal of Physics Condensed Matter

Year:

2005

Language:

english

File:

PDF, 135 KB

english, 2005

26

Alloy shift of “no-germanium” iron-related electronic levels in unstrained silicon-germanium alloys

Kruszewski, P., Kolkovsky, Vl., Mesli, A., Dobaczewski, L., Abrosimov, N. V., Markevich, V. P., Peaker, A. R.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 107 KB

english, 2007

27

alloys investigated with Laplace transform deep level spectroscopy

Kolkovsky, Vl., Mesli, A., Dobaczewski, L., Abrosimov, N. V., Żytkiewicz, Z. R., Peaker, A. R.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

28

Gallium interstitial in irradiated germanium: Deep level transient spectroscopy

Kolkovsky, Vl., Petersen, M. Christian, Mesli, A., Van Gheluwe, J., Clauws, P., Larsen, A. Nylandsted

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 108 KB

english, 2008

29

Low-temperature irradiation-induced defects in germanium: In situ analysis

Mesli, A., Dobaczewski, L., Nielsen, K. Bonde, Kolkovsky, Vl., Petersen, M. Christian, Larsen, A. Nylandsted

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 460 KB

english, 2008

30

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

Kamyczek, P., Placzek-Popko, E., Kolkovsky, Vl., Grzanka, S., Czernecki, R.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 842 KB

english, 2012

31

Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studies

Scheffler, L., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.14 MB

english, 2015

32

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Kolkovsky, Vl., Lukat, K., Kurth, E., Kunath, C.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 828 KB

english, 2015

33

Dissociation energies of P– and Sb–hydrogen-related complexes in n-type Ge

Kolkovsky, Vl, Klemm, S, Weber, J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 2.00 MB

english, 2012

34

Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition

Kolkovsky, Vl, Snigurenko, D, Jakiela, R, Guziewicz, E

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 851 KB

english, 2014

35

Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon

Scheffler, L., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 693 KB

english, 2015

36

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy

Soltanovich, O. A., Kolkovsky, Vl., Yakimov, E. B., Weber, J.

Year:

2014

Language:

english

File:

PDF, 385 KB

english, 2014

37

Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

Kolkovsky, Vl., Stübner, R., Langa, S., Wende, U., Kaiser, B., Conrad, H., Schenk, H.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.22 MB

english, 2016

38

Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

Kolkovsky, Vl., Zytkiewicz, Z. R., Korona, K. P., Sobanska, M., Klosek, K.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.14 MB

english, 2015

39

Electrical properties of p -ZnTe/ n + -GaAs junctions grown at different Te/Zn beam equivalent pressure ratios by molecular beam epitaxy

Kolkovsky, V., Kolkovsky, Vl., Karczewski, G.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 995 KB

english, 2016

40

Carbon-related defects in microelectronics

Kolkovsky, Vl., Stübner, R., Weber, J.

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 545 KB

english, 2017

41

Carbon-hydrogen-related complexes in Si

Kolkovsky, Vl., Stübner, R., Gwozdz, K., Weber, J.

Journal:

Physica B: Condensed Matter

Year:

2017

Language:

english

File:

PDF, 451 KB

english, 2017

42

Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

Gwozdz, K., Stübner, R., Kolkovsky, Vl., Weber, J.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 592 KB

english, 2017

43

Calibration of the photoluminescence technique for measuring concentrations of shallow dopants in Ge

Allardt, M., Kolkovsky, Vl., Irmscher, K., Weber, J.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 655 KB

english, 2012

44

Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique

Kolkovsky, Vl., Stübner, R.

Journal:

Physica B: Condensed Matter

Year:

2017

Language:

english

File:

PDF, 811 KB

english, 2017

45

Enhanced dielectric properties of thin Ta 2 O 5 films grown on 65 nm SiO 2 /Si

Kolkovsky, Vl., Kurth, E., Kunath, C.

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 378 KB

english, 2016

46

Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

Stübner, R., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 464 KB

english, 2015

47

Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy

Gwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J.

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 596 KB

english, 2018

48

Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

Stübner, R., Scheffler, L., Kolkovsky, Vl., Weber, J.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 892 KB

english, 2016

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски